1-Gb/s two-beam transimpedance smart-pixel optical receivers made from hybrid GaAs MQW modulators bonded to 0.8 μm silicon CMOS

We have made two-beam smart-pixel optical receivers using a hybrid attachment of GaAs-AlGaAs multiple quantum-well (MQW) pin devices to foundry-fabricated 0.8-μm linewidth CMOS circuits. Results from a repeater in which receiver output is coupled to a transmitter circuit driving a differential pair...

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Bibliographic Details
Published in:IEEE photonics technology letters 1996-03, Vol.8 (3), p.422-424
Main Authors: Woodward, T.K., Krishnamoorthy, A.V., Lentine, A.L., Goossen, K.W., Walker, J.A., Cunningham, J.E., Jan, W.Y., D'Asaro, L.A., Chirovsky, L.M.F., Hui, S.P., Tseng, B., Kossives, D., Dahringer, D., Leibenguth, R.E.
Format: Article
Language:English
Subjects:
Bonding
Circuit testing
Coupling circuits
Gallium arsenide
Optical receivers
Optical transmitters
Quantum well devices
Quantum well lasers
Repeaters
Silicon
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Summary:We have made two-beam smart-pixel optical receivers using a hybrid attachment of GaAs-AlGaAs multiple quantum-well (MQW) pin devices to foundry-fabricated 0.8-μm linewidth CMOS circuits. Results from a repeater in which receiver output is coupled to a transmitter circuit driving a differential pair of MQW modulators are reported. When tested with high-contrast, directly-modulated laser diodes, an optical energy of 26 fJ (-21.5 dBm) in each beam is required to obtain a bit error rate of 1×10/sup -9/ at 622 Mb/s, and operation at this error rate is observed to 1 Gb/s. The described receiver (one of several we have made) has three amplification stages, with the first being of the transimpedance type. The reported receiver fits easily within a 45×25 μm area, and the entire repeater circuit draws about 2 mA from a 5-V power supply, with the transmitter accounting for about 20 percent of the total.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.481137