Variation Tolerance in a Multichannel Carbon-Nanotube Transistor for High-Speed Digital Circuits

This paper introduces the theory of a carbon-nanotube multichannel transistor and shows that, due to statistical averaging in such a structure, a lot of variations in growth and processing can be tolerated. A model of such a structure has been presented, and Monte Carlo simulations have been perform...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2009-03, Vol.56 (3), p.383-392
Main Authors: Raychowdhury, A., De, V.K., Kurtin, J., Borkar, S.Y., Roy, K., Keshavarzi, A.
Format: Article
Language:English
Subjects:
Applied sciences
Carbon nanotube transistor
Computer simulation
Design. Technologies. Operation analysis. Testing
Devices
Electronics
Exact sciences and technology
High speed
Integrated circuits
Molecular electronics, nanoelectronics
Monte Carlo (MC) simulations
Monte Carlo methods
Multichannel
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Tolerances
Transistors
variation tolerance
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Summary:This paper introduces the theory of a carbon-nanotube multichannel transistor and shows that, due to statistical averaging in such a structure, a lot of variations in growth and processing can be tolerated. A model of such a structure has been presented, and Monte Carlo simulations have been performed to identify which of the imperfections and sources of variation are more critical than others. We use this theoretical framework to study short and multichannel carbon-nanotube FET structures for high-performance VLSI.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2008.2010604