Double gate movable body Micro-Electro-Mechanical FET as hysteretic switch: Application to data transmission systems

This paper reports on the fabrication, experimental characterization and data transmission application of a double-gate movable body FET. As its name suggests, the proposed movable-body Micro-Electro-Mechanical FET (MB-MEMFET) is a hybrid MEMS-semiconductor device that, in contrast with previously r...

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Bibliographic Details
Main Authors: Grogg, D., Meinen, C., Tsamados, D., Tekin, H.C., Kayal, M., Ionescu, A.M.
Format: Conference Proceeding
Language:English
Subjects:
Air gaps
Data communication
Double-gate FETs
Fabrication
Frequency shift keying
Hysteresis
MOSFET circuits
Nanoscale devices
Reproducibility of results
Switches
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Summary:This paper reports on the fabrication, experimental characterization and data transmission application of a double-gate movable body FET. As its name suggests, the proposed movable-body Micro-Electro-Mechanical FET (MB-MEMFET) is a hybrid MEMS-semiconductor device that, in contrast with previously reported Suspended-Gate MOSFET, has a movable body separated by nano-size air gaps from two lateral fixed gates. We report here on the unique abrupt hysteretic characteristic of MB-MEMFET, which for our design offer reproducibility after intense cycling and, due to double gate architecture, a multi-level tunable hysteresis. Based on the I D -V G hysteretic behavior of the new hybrid device we report for the first time a FSK circuit exploiting oscillation at two selectable frequencies (26 kHz and 14 kHz) used to transmit numerical data, which demonstrates the potential of the MB-MEMFET for applications in data transmission systems.
ISSN:1930-8876
DOI:10.1109/ESSDERC.2008.4681758