Investigation of InGaN/GaN light emitting diodes by excimer laser etching

The InGaN/GaN light emitting diodes (LEDs) with a nano-roughened top p-GaN surface which using Ni nano-mask and laser etching methods were demonstrated and analyzed. The light output power of the InGaN/GaN LED with a nano-roughened top p-GaN surface with laser etching energy of 300 mJ/cm -2 is 1.55...

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Bibliographic Details
Main Authors: Hung-Wen Huang, Jung-Tang Chu, Chih-Chiang Kao, Chang-Chin Yu, Tien-Chang Lu, Hao-Chung Kuo, Shing-Chung Wang
Format: Conference Proceeding
Language:English
Subjects:
(140.2180) Excimer lasers
Etching
Gallium nitride
Light emitting diodes
Rough surfaces
Surface emitting lasers
Surface roughness
Surface treatment
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Summary:The InGaN/GaN light emitting diodes (LEDs) with a nano-roughened top p-GaN surface which using Ni nano-mask and laser etching methods were demonstrated and analyzed. The light output power of the InGaN/GaN LED with a nano-roughened top p-GaN surface with laser etching energy of 300 mJ/cm -2 is 1.55 times that of a conventional LED, and the wall-plug efficiency is 68% at 20 mA. The series resistance of InGaN/GaN LED was reduced by 32% by the increase in the contact area of the nano-roughened surface.
ISSN:2160-9004
DOI:10.1109/CLEO.2006.4628800