A new source/drain germanium-enrichment process comprising Ge deposition and laser-induced local melting and recrystallization for P-FET performance enhancement

We report for the first time a new process technology for boosting the Ge content in SiGe source/drain (S/D) stressors to increase strain and performance levels in p-FETs. By laser-induced local melting and inter-mixing of an amorphous Ge layer with an underlying Si 0.8 Ge 0.2 S/D region, a graded S...

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Main Authors: Fangyue Liu, Hoong-Shing Wong, Kah-Wee Ang, Ming Zhu, Xincai Wang, Lai, D.M.-Y., Poh-Chong Lim, Ben Lian Huat Tan, Tripathy, S., Sue-Ann Oh, Samudra, G.S., Balasubramanian, N., Yee-Chia Yeo
Format: Conference Proceeding
Language:English
Subjects:
Annealing
International Electron Devices Meeting
Lasers
Logic gates
Silicon
Silicon germanium
Strain
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Summary:We report for the first time a new process technology for boosting the Ge content in SiGe source/drain (S/D) stressors to increase strain and performance levels in p-FETs. By laser-induced local melting and inter-mixing of an amorphous Ge layer with an underlying Si 0.8 Ge 0.2 S/D region, a graded SiGe S/D stressor is formed upon recrystallization. Peak Ge content in the graded SiGe S/D is doubled over the as-grown film. Raman analysis confirmed the retention of high S/D strain levels due to the rapid non-equilibrium recrystallization process. The new process technology developed here employs several simple additional steps, including amorphous Ge deposition and laser anneal (LA). For a p-FET with Ge enriched S/D, 21% and 12% I Dsat enhancement at a fixed I OFF of 2times10 -8 A/mum is observed over control p-FETs with Si 0.8 Ge 0.2 S/D formed by RTA and LA, respectively.
ISSN:0743-1562
DOI:10.1109/VLSIT.2008.4588550