Key factors to sustain the extension of a MHM-based integration scheme to medium and high porosity PECVD low-k materials

Interconnect solutions for advanced technology nodes using PECVD techniques for low-k deposition require the use of porogen-based process with post deposition UV cure. By using two different UV cure lamps (A, B) in combination with different porogen loads, three different micro-porous low-k films ar...

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Main Authors: Travaly, Y., van Aelst, J., Truffert, V., Verdonck, P., Dupont, T., Camerotto, E., Richard, O., Bender, H., Kroes, C., de Roest, D., Vereecke, G., Claes, M., Le, Q. T., Kesters, E., van Cauwenberghe, M., Beynet, J., Kaneko, S., Struyf, H., Baklanov, M., Matsushita, K., Kobayashi, N., Sprey, H., Beyer, G.
Format: Conference Proceeding
Language:English
Subjects:
Ash
Corrosion
Dielectrics
Instruments
Lamps
Plasma applications
Plasma chemistry
Polymer films
Resists
Wet etching
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Summary:Interconnect solutions for advanced technology nodes using PECVD techniques for low-k deposition require the use of porogen-based process with post deposition UV cure. By using two different UV cure lamps (A, B) in combination with different porogen loads, three different micro-porous low-k films are developed: Aurora® ELK HM (k~2.5; porosity (P) ~25%), Aurora® ELK A (k~2.3; P~34%) and Aurora® ELK B (k~2.2; P~37%). Integrating these materials is complex and challenging. We discuss key factors that are instrumental to the extension of a metal hard mask (MHM)-based integration scheme to these 3 low-k films. Our findings: (I) for sub-100nm dimensions, patterning and low-k interactions affect the dynamic of organic residue formation and thereby impact electrical yield; (II) choosing the right ash, etch and clean sequence is mandatory to control plasma damage, profile, residues and corrosion on top of the MHM; (III) Cu reduction plasmas must be adjusted when porosity is increased to mitigate field damage.
ISSN:2380-632X
2380-6338
DOI:10.1109/IITC.2008.4546923