Strained FinFETs with In-situ Doped Si1-yCy Source and Drain Stressors: Performance Boost with Lateral Stressor Encroachment and High Substitutional Carbon Content

In this paper, we report the first demonstration of n-channel FinFETs with in-situ doped silicon-carbon (Si 1-y C y or SiC:P) source and drain (S/D) stressors. New key features incorporated in this work for performance enhancement includes record-high substitutional carbon concentration C sub of 2.1...

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Bibliographic Details
Main Authors: Tsung-Yang Liow, Kian-Ming Tan, Weeks, D., Lee, R.T.P., Ming Zhu, Keat-Mun Hoe, Chih-Hang Tung, Bauer, M., Spear, J., Thomas, S.G., Samudra, G.S., Balasubramanian, N., Yee-Chia Yeo
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Capacitive sensors
Doping
Epitaxial growth
FETs
FinFETs
Lattices
Microelectronics
Silicon carbide
Strain control
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Summary:In this paper, we report the first demonstration of n-channel FinFETs with in-situ doped silicon-carbon (Si 1-y C y or SiC:P) source and drain (S/D) stressors. New key features incorporated in this work for performance enhancement includes record-high substitutional carbon concentration C sub of 2.1%, high in-situ phosphorus doping concentration in S/D, extended Pi -shaped S/D stressors that wrap around the Si fin for maximum lattice interaction, lateral stressor encroachment under the spacer for closer promixity to channel region for maximum channel stress as well as reduced S/D extension resistances.
ISSN:1524-766X
2690-8174
DOI:10.1109/VTSA.2008.4530829