Semiconductor hot electron detector for mm and sub-mm ranges

Direct detection semiconductor hot electron bolometer (SHEB) for mm and sub-mm ranges is considered and its model is developed. The device operation takes into account the phenomena in semiconductor bipolar plasma. Experiments have shown that at 300 K Hg 0.8 Cd 0.2 Te SHEB prototype device is sensit...

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Bibliographic Details
Main Authors:	Sizov, F.F., Dobrovolsky, V.N., Kamenev, Y.E., Smirnov, A.B.
Format:	Conference Proceeding
Language:	eng
Subjects:	Absorption Bolometer Charge carrier processes Conductivity Disruption tolerant networking Electrons Frequency Hafnium hot electrons Lattices narrow-gap semiconductor Radiation detectors Semiconductor radiation detectors THz
Online Access:	Get full text
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Summary:	Direct detection semiconductor hot electron bolometer (SHEB) for mm and sub-mm ranges is considered and its model is developed. The device operation takes into account the phenomena in semiconductor bipolar plasma. Experiments have shown that at 300 K Hg 0.8 Cd 0.2 Te SHEB prototype device is sensitive at radiation frequencies v = 36, 39, 55, 75 GHz and 0.89, 1.58 THz.
ISSN:	2162-2027