Optimization of PIN photodiodes parameters for enhanced proton radiation tolerance based on numerical simulations

This work focuses on study of radiation induced displacement damage effects on silicon PIN photodiodes at both, dark and illumination conditions, by mean of numerical simulations. For fluences greater than a certain limiting value, relation between photocurrent and dark current decreases below ten,...

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Bibliographic Details
Main Authors: Cappelletti, M.A., Cedola, A.P., Peltzer y Blanca, E.L.
Format: Conference Proceeding
Language:English
Subjects:
Dark current
Design optimization
Iterative methods
Lighting
Numerical simulation
Photoconductivity
PIN photodiodes
Protons
Radiation effects
Silicon
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Summary:This work focuses on study of radiation induced displacement damage effects on silicon PIN photodiodes at both, dark and illumination conditions, by mean of numerical simulations. For fluences greater than a certain limiting value, relation between photocurrent and dark current decreases below ten, leading to an undesirable device operation. An iterative method is proposed for design optimization of PIN photodiodes to be used under irradiation, that minimize radiation effects on total reverse current and maximize device response to incident light.
DOI:10.1109/ISDRS.2007.4422344