Interfacial layer thickness dependence of the low- frequency noise in high-k dielectric MOSFETs

We present the results of simulation study on the low-frequency excess noise in high-k HfO 2 /SiO 2 dual dielectric n-MOSFET's. Based on the 'unified model' where the tunneling to the traps in the oxides is the major noise generation mechanism, we show how the low frequency noise dens...

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Bibliographic Details
Main Authors: Hyungdo Nam, Jungil Lee, Ilki Han, Haesuk Yang
Format: Conference Proceeding
Language:English
Subjects:
Dielectric devices
Electron traps
Fluctuations
Frequency
Hafnium oxide
high-k dielectric
High-K gate dielectrics
Low-frequency noise
MOSFETs
Semiconductor device noise
Tunneling
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Summary:We present the results of simulation study on the low-frequency excess noise in high-k HfO 2 /SiO 2 dual dielectric n-MOSFET's. Based on the 'unified model' where the tunneling to the traps in the oxides is the major noise generation mechanism, we show how the low frequency noise density depends on the thickness of the interfacial oxide layer.
DOI:10.1109/NMDC.2006.4388881