A Novel Blocking Technology for Improving the Short-Channel Effects in Polycrystalline Silicon TFT Devices

An original blocking technology is proposed for improving the short-channel characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs). In particular, two types of modified devices called poly-Si TFT with block oxide and poly-Si on partial insulator (POPI)-TFT are designed for t...

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Published in:IEEE transactions on electron devices 2007-12, Vol.54 (12), p.3238-3244
Main Authors: LIN, Jyi-Tsong, ENG, Yi-Chuen
Format: Article
Language:English
Subjects:
Applied sciences
Blocking
Blocking technology
Compound structure devices
Devices
Displays
Drains
Electronics
Exact sciences and technology
Oxides
Performance enhancement
polycrystalline silicon thin-film transistors (poly-Si TFTs)
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
short-channel effects (SCEs)
Silicon
small-size displays
Thin film transistors
Thin films
Transistors
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cited_by cdi_FETCH-LOGICAL-c479t-262dcff313a1609a12934816411123010425e5c451a068e23d2a80288195157b3
cites cdi_FETCH-LOGICAL-c479t-262dcff313a1609a12934816411123010425e5c451a068e23d2a80288195157b3
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container_title IEEE transactions on electron devices
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creator LIN, Jyi-Tsong
ENG, Yi-Chuen
description An original blocking technology is proposed for improving the short-channel characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs). In particular, two types of modified devices called poly-Si TFT with block oxide and poly-Si on partial insulator (POPI)-TFT are designed for the first time in this field to enhance device performance. The proposed TFT structures can significantly reduce short-channel effects when compared with a thick source/drain (S/D) poly-Si TFT (i.e., the fully depleted TFT). In addition, an ultrathin (UT) S/D structure (UT-TFT) is designed to verify that the block oxide TFT devices do achieve improved performance without needing the thin active layers and ultrashallow junction depth. Also, the POPI-TFT is found to reduce the thermal instability through its natural body-tied scheme.
doi_str_mv 10.1109/TED.2007.908893
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fullrecord <record><control><sourceid>proquest_ieee_</sourceid><recordid>TN_cdi_ieee_primary_4383039</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4383039</ieee_id><sourcerecordid>903637935</sourcerecordid><originalsourceid>FETCH-LOGICAL-c479t-262dcff313a1609a12934816411123010425e5c451a068e23d2a80288195157b3</originalsourceid><addsrcrecordid>eNqFkcFLHDEUh4NUcGt79tBLEGxPsyZ5yUxytOvaCqKFTs8hxoybbTaxyezC_vfNsqLQQz2F8L7fj_f4EDqhZEopUef9_HLKCOmmikip4ABNqBBdo1revkMTQqhsFEg4Qu9LWdZvyzmboOUFvk0bF_DXkOxvHx9x7-wippAet3hIGV-vnnLa7AbjwuGfi5THZrYwMdbMfBicHQv2Ef9IYWvztowmBB8r6IO3KeL-qseXbuOtKx_Q4WBCcR-f32P062rez743N3ffrmcXN43lnRob1rIHOwxAwdCWKEOZAi7rupRSBoQSzoQTlgtqSCsdgwdmJGFSUiWo6O7hGH3Z99bF_6xdGfXKF-tCMNGlddGKQAudAvEmKTtRWSLbSn7-LwmcA-0YVPD0H3CZ1jnWe3WtkdUP27Wd7yGbUynZDfop-5XJW02J3snUVabeydR7mTVx9lxrijVhyCZaX15jqq6qJKvcpz3nnXMvY169E1DwF9K-pEk</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>863800726</pqid></control><display><type>article</type><title>A Novel Blocking Technology for Improving the Short-Channel Effects in Polycrystalline Silicon TFT Devices</title><source>IEEE Electronic Library (IEL) Journals</source><creator>LIN, Jyi-Tsong ; ENG, Yi-Chuen</creator><creatorcontrib>LIN, Jyi-Tsong ; ENG, Yi-Chuen</creatorcontrib><description>An original blocking technology is proposed for improving the short-channel characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs). In particular, two types of modified devices called poly-Si TFT with block oxide and poly-Si on partial insulator (POPI)-TFT are designed for the first time in this field to enhance device performance. The proposed TFT structures can significantly reduce short-channel effects when compared with a thick source/drain (S/D) poly-Si TFT (i.e., the fully depleted TFT). In addition, an ultrathin (UT) S/D structure (UT-TFT) is designed to verify that the block oxide TFT devices do achieve improved performance without needing the thin active layers and ultrashallow junction depth. Also, the POPI-TFT is found to reduce the thermal instability through its natural body-tied scheme.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2007.908893</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Blocking ; Blocking technology ; Compound structure devices ; Devices ; Displays ; Drains ; Electronics ; Exact sciences and technology ; Oxides ; Performance enhancement ; polycrystalline silicon thin-film transistors (poly-Si TFTs) ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; short-channel effects (SCEs) ; Silicon ; small-size displays ; Thin film transistors ; Thin films ; Transistors</subject><ispartof>IEEE transactions on electron devices, 2007-12, Vol.54 (12), p.3238-3244</ispartof><rights>2008 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2007</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c479t-262dcff313a1609a12934816411123010425e5c451a068e23d2a80288195157b3</citedby><cites>FETCH-LOGICAL-c479t-262dcff313a1609a12934816411123010425e5c451a068e23d2a80288195157b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4383039$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,786,790,27957,27958,55147</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=19875982$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>LIN, Jyi-Tsong</creatorcontrib><creatorcontrib>ENG, Yi-Chuen</creatorcontrib><title>A Novel Blocking Technology for Improving the Short-Channel Effects in Polycrystalline Silicon TFT Devices</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>An original blocking technology is proposed for improving the short-channel characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs). In particular, two types of modified devices called poly-Si TFT with block oxide and poly-Si on partial insulator (POPI)-TFT are designed for the first time in this field to enhance device performance. The proposed TFT structures can significantly reduce short-channel effects when compared with a thick source/drain (S/D) poly-Si TFT (i.e., the fully depleted TFT). In addition, an ultrathin (UT) S/D structure (UT-TFT) is designed to verify that the block oxide TFT devices do achieve improved performance without needing the thin active layers and ultrashallow junction depth. Also, the POPI-TFT is found to reduce the thermal instability through its natural body-tied scheme.</description><subject>Applied sciences</subject><subject>Blocking</subject><subject>Blocking technology</subject><subject>Compound structure devices</subject><subject>Devices</subject><subject>Displays</subject><subject>Drains</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Oxides</subject><subject>Performance enhancement</subject><subject>polycrystalline silicon thin-film transistors (poly-Si TFTs)</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>short-channel effects (SCEs)</subject><subject>Silicon</subject><subject>small-size displays</subject><subject>Thin film transistors</subject><subject>Thin films</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNqFkcFLHDEUh4NUcGt79tBLEGxPsyZ5yUxytOvaCqKFTs8hxoybbTaxyezC_vfNsqLQQz2F8L7fj_f4EDqhZEopUef9_HLKCOmmikip4ABNqBBdo1revkMTQqhsFEg4Qu9LWdZvyzmboOUFvk0bF_DXkOxvHx9x7-wippAet3hIGV-vnnLa7AbjwuGfi5THZrYwMdbMfBicHQv2Ef9IYWvztowmBB8r6IO3KeL-qseXbuOtKx_Q4WBCcR-f32P062rez743N3ffrmcXN43lnRob1rIHOwxAwdCWKEOZAi7rupRSBoQSzoQTlgtqSCsdgwdmJGFSUiWo6O7hGH3Z99bF_6xdGfXKF-tCMNGlddGKQAudAvEmKTtRWSLbSn7-LwmcA-0YVPD0H3CZ1jnWe3WtkdUP27Wd7yGbUynZDfop-5XJW02J3snUVabeydR7mTVx9lxrijVhyCZaX15jqq6qJKvcpz3nnXMvY169E1DwF9K-pEk</recordid><startdate>20071201</startdate><enddate>20071201</enddate><creator>LIN, Jyi-Tsong</creator><creator>ENG, Yi-Chuen</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20071201</creationdate><title>A Novel Blocking Technology for Improving the Short-Channel Effects in Polycrystalline Silicon TFT Devices</title><author>LIN, Jyi-Tsong ; ENG, Yi-Chuen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c479t-262dcff313a1609a12934816411123010425e5c451a068e23d2a80288195157b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Applied sciences</topic><topic>Blocking</topic><topic>Blocking technology</topic><topic>Compound structure devices</topic><topic>Devices</topic><topic>Displays</topic><topic>Drains</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Oxides</topic><topic>Performance enhancement</topic><topic>polycrystalline silicon thin-film transistors (poly-Si TFTs)</topic><topic>Semiconductor devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>short-channel effects (SCEs)</topic><topic>Silicon</topic><topic>small-size displays</topic><topic>Thin film transistors</topic><topic>Thin films</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>LIN, Jyi-Tsong</creatorcontrib><creatorcontrib>ENG, Yi-Chuen</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Electronic Library Online</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology &amp; Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>LIN, Jyi-Tsong</au><au>ENG, Yi-Chuen</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Novel Blocking Technology for Improving the Short-Channel Effects in Polycrystalline Silicon TFT Devices</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2007-12-01</date><risdate>2007</risdate><volume>54</volume><issue>12</issue><spage>3238</spage><epage>3244</epage><pages>3238-3244</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><notes>ObjectType-Article-2</notes><notes>SourceType-Scholarly Journals-1</notes><notes>ObjectType-Feature-1</notes><notes>content type line 23</notes><abstract>An original blocking technology is proposed for improving the short-channel characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs). In particular, two types of modified devices called poly-Si TFT with block oxide and poly-Si on partial insulator (POPI)-TFT are designed for the first time in this field to enhance device performance. The proposed TFT structures can significantly reduce short-channel effects when compared with a thick source/drain (S/D) poly-Si TFT (i.e., the fully depleted TFT). In addition, an ultrathin (UT) S/D structure (UT-TFT) is designed to verify that the block oxide TFT devices do achieve improved performance without needing the thin active layers and ultrashallow junction depth. Also, the POPI-TFT is found to reduce the thermal instability through its natural body-tied scheme.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2007.908893</doi><tpages>7</tpages></addata></record>
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1557-9646
language eng
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source IEEE Electronic Library (IEL) Journals
subjects Applied sciences
Blocking
Blocking technology
Compound structure devices
Devices
Displays
Drains
Electronics
Exact sciences and technology
Oxides
Performance enhancement
polycrystalline silicon thin-film transistors (poly-Si TFTs)
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
short-channel effects (SCEs)
Silicon
small-size displays
Thin film transistors
Thin films
Transistors
title A Novel Blocking Technology for Improving the Short-Channel Effects in Polycrystalline Silicon TFT Devices
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-09-22T15%3A24%3A37IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_ieee_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20Novel%20Blocking%20Technology%20for%20Improving%20the%20Short-Channel%20Effects%20in%20Polycrystalline%20Silicon%20TFT%20Devices&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=LIN,%20Jyi-Tsong&rft.date=2007-12-01&rft.volume=54&rft.issue=12&rft.spage=3238&rft.epage=3244&rft.pages=3238-3244&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2007.908893&rft_dat=%3Cproquest_ieee_%3E903637935%3C/proquest_ieee_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c479t-262dcff313a1609a12934816411123010425e5c451a068e23d2a80288195157b3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=863800726&rft_id=info:pmid/&rft_ieee_id=4383039&rfr_iscdi=true