A Novel Blocking Technology for Improving the Short-Channel Effects in Polycrystalline Silicon TFT Devices

An original blocking technology is proposed for improving the short-channel characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs). In particular, two types of modified devices called poly-Si TFT with block oxide and poly-Si on partial insulator (POPI)-TFT are designed for t...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2007-12, Vol.54 (12), p.3238-3244
Main Authors: LIN, Jyi-Tsong, ENG, Yi-Chuen
Format: Article
Language:English
Subjects:
Applied sciences
Blocking
Blocking technology
Compound structure devices
Devices
Displays
Drains
Electronics
Exact sciences and technology
Oxides
Performance enhancement
polycrystalline silicon thin-film transistors (poly-Si TFTs)
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
short-channel effects (SCEs)
Silicon
small-size displays
Thin film transistors
Thin films
Transistors
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Description
Summary:An original blocking technology is proposed for improving the short-channel characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs). In particular, two types of modified devices called poly-Si TFT with block oxide and poly-Si on partial insulator (POPI)-TFT are designed for the first time in this field to enhance device performance. The proposed TFT structures can significantly reduce short-channel effects when compared with a thick source/drain (S/D) poly-Si TFT (i.e., the fully depleted TFT). In addition, an ultrathin (UT) S/D structure (UT-TFT) is designed to verify that the block oxide TFT devices do achieve improved performance without needing the thin active layers and ultrashallow junction depth. Also, the POPI-TFT is found to reduce the thermal instability through its natural body-tied scheme.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2007.908893