A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput

A 512Mb diode-switch PRAM is developed in a 90nm CMOS technology. A core configuration, read/write circuit techniques, and a charge-pump system for the diode-switch PRAM are described. Through these schemes, the PRAM achieves read throughput of 266MB/S and maximum write throughput of 4.64MB/S with a...

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Bibliographic Details
Main Authors: Lee, Kwang-Jin, Cho, Beak-Hyung, Cho, Woo-Yeong, Kang, Sangbeom, Choi, Byung-Gil, Oh, Hyung-Rok, Lee, Chang-Soo, Kim, Hye-Jin, Park, Joon-Min, Wang, Qi, Park, Mu-Hui, Ro, Yu-Hwan, Choi, Joon-Yong, Kim, Ki-Sung, Kim, Young-Ran, Shin, In-Cheol, Lim, Ki-Won, Cho, Ho-Keun, Choi, Chang-Han, Chung, Won-Ryul, Kim, Du-Eung, Yu, Kwang-Suk, Jeong, Gi-Tae, Jeong, Hong-Sik, Kwak, Choong-Keun, Kim, Chang-Hyun, Kim, Kinam
Format: Conference Proceeding
Language:English
Subjects:
Charge pumps
Circuits
Diodes
Leakage current
Material storage
Nonvolatile memory
Phase change random access memory
Switches
Throughput
Voltage
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Summary:A 512Mb diode-switch PRAM is developed in a 90nm CMOS technology. A core configuration, read/write circuit techniques, and a charge-pump system for the diode-switch PRAM are described. Through these schemes, the PRAM achieves read throughput of 266MB/S and maximum write throughput of 4.64MB/S with a 1.8V supply.
ISSN:0193-6530
2376-8606
DOI:10.1109/ISSCC.2007.373499