Metal Inserted Poly-Si (MIPS) and FUSI dual metal (TaN and NiSi) CMOS integration

We demonstrate for the first time the CMOS integration combining inserted metal with FUSI using a novel process flow. The proposed flow allows for a flexible gate electrode and dielectric choice for island PMOSFETS, without adding excessive process complexity or additional masks. It is considered as...

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Bibliographic Details
Main Authors: Singanamalla, R., van Dal, M.J.H., Demand, M., Shamiryan, D., Beckx, S., Jaenen, P., Locorotondo, S., Yu, H., Hooker, J.C., Kubicek, S., de Meyer, K., Biesemans, S., Juffermans, C., Lander, R.J.P.
Format: Conference Proceeding
Language:English
Subjects:
Capacitance
CMOS process
CMOS technology
Dielectric materials
Electrodes
Etching
Inorganic materials
MOSFETs
Oxidation
Tin
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Summary:We demonstrate for the first time the CMOS integration combining inserted metal with FUSI using a novel process flow. The proposed flow allows for a flexible gate electrode and dielectric choice for island PMOSFETS, without adding excessive process complexity or additional masks. It is considered as a promising alternative for dual metal integration for 45 nm bulk CMOS technology and beyond.
ISSN:1524-766X
2690-8174
DOI:10.1109/VTSA.2007.378906