Study of Plasma Damage at Recess-Channel Gate (RG) Structure During Plasma Nitridation

The plasma induced damage of gate oxide was observed at the recess-channel gate (RG) transistor during the plasma nitridation, which is not observed at the 2-dimensional planar structure. The model of electron shading which is known as a topographical effect in plasma charging can explain the specif...

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Bibliographic Details
Main Authors: Heung-Jae Cho, Tae-Yoon Kim, Se-Aug Jang, Hyun Ahn, Yong Soo Kim, Kwan-Yong Lim, Min Gyu Sung, Hong-Seon Yang, Seung-Ho Pyi, Jin Woong Kim
Format: Conference Proceeding
Language:English
Subjects:
Boron
Design for quality
Fluid flow
MOS capacitors
Nitrogen
Plasma properties
Random access memory
Roentgenium
Silicon
Transistors
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Summary:The plasma induced damage of gate oxide was observed at the recess-channel gate (RG) transistor during the plasma nitridation, which is not observed at the 2-dimensional planar structure. The model of electron shading which is known as a topographical effect in plasma charging can explain the specific structure dependence of the plasma damage. The thinnest bottom gate oxide at the RG structure is found to be severe damaged by positive ions during the plasma nitridation
ISSN:1541-7026
1938-1891
DOI:10.1109/RELPHY.2007.369917