High Power Diode Pumped Vertical Externalcavity Surface-emitting Lasers (VECSELS)

We describe the theoretical analysis and calculations of the 980 nm high-power diode-pumped vertical external cavity surface emitting laser (VECSEL). The VECSEL with active region of InGaAs/GaAsP/AlGaAs system can be operated near 500 mW in a single transverse mode.

Saved in:
Bibliographic Details
Main Authors: Lu, G.G., He, C.F., Shan, X.N., Qin, L., Yan, C.L., Ning, Y.Q., Wang, L.J.
Format: Conference Proceeding
Language:English
Subjects:
Indium gallium arsenide
Laser excitation
Optical surface waves
Power generation
Power lasers
Pump lasers
Semiconductor diodes
Semiconductor lasers
Surface emitting lasers
Vertical cavity surface emitting lasers
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We describe the theoretical analysis and calculations of the 980 nm high-power diode-pumped vertical external cavity surface emitting laser (VECSEL). The VECSEL with active region of InGaAs/GaAsP/AlGaAs system can be operated near 500 mW in a single transverse mode.
ISSN:2162-2027
DOI:10.1109/ICIMW.2006.368444