Growth and Transport Studies in M/I/ p-SC Magnetic Tunnel Diodes Containing Different Tunnel Barrier Materials

Metal-insulator-semiconductor (MIS) magnetic tunnel diodes consisting of ferromagnetic metal (Fe) and semiconductor (Ga 1-x Mn x As) electrodes with various tunnel barrier materials (AlAs, GaAs, ZnTe, and MgO) were fabricated. A clear tunneling magnetoresistance (TMR) effect was observed in all the...

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Bibliographic Details
Published in:IEEE transactions on magnetics 2007-06, Vol.43 (6), p.2809-2811
Main Authors: Agarwal, K.C., Saito, H., Yuasa, S., Ando, K.
Format: Article
Language:English
Subjects:
Barriers
Cross-disciplinary physics: materials science
rheology
Electrodes
Exact sciences and technology
Ferromagnetic semiconductor
Gallium arsenide
Gallium arsenides
Iron
Magnetic materials
Magnetic semiconductors
Magnetism
Magnetoresistance
Materials science
Metal-insulator structures
metal-semiconductor hybrid structures
Other topics in materials science
Physics
Semiconductor diodes
Semiconductor materials
Semiconductors
spin-dependent transport
Tunnel diodes
Tunneling magnetoresistance
Tunnels (transportation)
Zinc compounds
Zinc tellurides
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Summary:Metal-insulator-semiconductor (MIS) magnetic tunnel diodes consisting of ferromagnetic metal (Fe) and semiconductor (Ga 1-x Mn x As) electrodes with various tunnel barrier materials (AlAs, GaAs, ZnTe, and MgO) were fabricated. A clear tunneling magnetoresistance (TMR) effect was observed in all the samples. Magnetoresistance ratios at 2 K were observed to be 38% for AlAs, 11% for GaAs, 8% for ZnTe, and ~1% for MgO. Growth and transport studies strongly suggested that the small lattice mismatch between the barrier and the electrode materials and Mn-free interfaces are important for have significant influence on developing high-quality MIS magnetic tunnel diodes.
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.2007.894015