Fabrication and Characteristics of Double-Gated Field Emitters with Thick Extraction Gate Electrode

This paper presents a double-gated Spindt-type field emitter with thick extraction gate electrode. Simulation of the dependence of the electric field at the top of the emitter tip on the thickness of the extraction gate electrode is done. This emitter is fabricated using a silicon-on-insulator wafer...

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Bibliographic Details
Main Authors: Tsubouchi, Hiroshi, Sakuma, Sadayoshi, Neo, Yoichiro, Mimura, Hidenori, Sakai, Toshikatsu, Ushirozawa, Mizumoto, Yamamoto, Toshihiro
Format: Conference Proceeding
Language:English
Subjects:
Apertures
Chromium
Crosstalk
Electrodes
Electron beams
Fabrication
Flat panel displays
Focusing
Laboratories
Voltage
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Summary:This paper presents a double-gated Spindt-type field emitter with thick extraction gate electrode. Simulation of the dependence of the electric field at the top of the emitter tip on the thickness of the extraction gate electrode is done. This emitter is fabricated using a silicon-on-insulator wafer as a starting material. The current-voltage characteristics show that emission current is obtained at an extraction gate voltage of about 66 V
ISSN:2164-2370
DOI:10.1109/IVNC.2006.335436