Impact of WSix Metal Gate Stoichiometry on Fully Depleted SOI MOSFETs Electrical Properties

For the first time, we report fully depleted SOI MOS transistors with WSi x gate on HfO 2 . Gate work function, dielectric properties and channel mobility are presented in terms of Si/W ratio and compared to TiN gate devices. A 35% electron mobility gain was obtained with a WSi x gate device as comp...

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Bibliographic Details
Main Authors: Widiez, J., Vinet, M., Guillaumot, B., Garros, X., Minoret, S., Poiroux, T., Weber, O., Thevenod, L., Holliger, P., Previtali, B., Barral, V., Sidi Ali Cherif, K., Grosgeorges, C.P., Toffoli, A., Maitrejean, S., Casse, M., Martin, F., Lafond, D., Faynot, O., Mouis, M., Deleonibus, S.
Format: Conference Proceeding
Language:English
Subjects:
Atomic layer deposition
Dielectric materials
Electron mobility
Hafnium oxide
Leakage current
MOSFETs
Scattering
Temperature
Threshold voltage
Tin
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Summary:For the first time, we report fully depleted SOI MOS transistors with WSi x gate on HfO 2 . Gate work function, dielectric properties and channel mobility are presented in terms of Si/W ratio and compared to TiN gate devices. A 35% electron mobility gain was obtained with a WSi x gate device as compared to a TiN gate transistor. It was found that both mobility and dielectric characteristics were drastically improved by decreasing the Si/W ratio of WSi x films
ISSN:1524-766X
2690-8174
DOI:10.1109/VTSA.2006.251092