Novel T shape structure PCM and Electrical-Thermal Characteristics

Novel interfacial layer structure was proposed with adjustable resistance ratio and more uniform data distribution capabilities. The reduction of writing power can also be expected with further optimizing the materials and corresponding thicknesses. The performance will be even better with the shrin...

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Bibliographic Details

Main Authors:	Wang, W.H., Chao, D.S., Chen, Y.C., Lee, C.M., Hsu, H.H., Chuo, Y., Tseng, M.H., Lee, M.H., Chen, W.S., Kao, M.J., Tsai, M.J.
Format:	Conference Proceeding
Language:	eng
Subjects:	Amorphous materials CMOS technology Conductivity Electric resistance Nonvolatile memory Paper technology Phase change materials Plugs Shape Threshold voltage
Online Access:	Request full text
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