Ballistic transport effects in InP/GaInAs heterostructure bipolar transistors

The electron transport mechanism in the base (p=5/spl times/10/sup 19/cm/sup -3/) of GaInAs/InP heterojunction bipolar transistor was studied by the Monte Carlo method using the dielectric function response method. The self-consistent treatment included elastic and inelastic electron scattering. The...

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Bibliographic Details
Main Authors: Reygenson, A., Menin, O.A., Smith, P.R., Hamm, R.A., Montgomery, R.K., Yadvish, R.D., Ritter, D., Haner, M.
Format: Conference Proceeding
Language:English
Subjects:
Ballistic transport
Bipolar transistors
Charge carrier processes
Dielectrics
Electrons
Indium phosphide
Light scattering
Particle scattering
Phonons
Plasmons
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Summary:The electron transport mechanism in the base (p=5/spl times/10/sup 19/cm/sup -3/) of GaInAs/InP heterojunction bipolar transistor was studied by the Monte Carlo method using the dielectric function response method. The self-consistent treatment included elastic and inelastic electron scattering. The room temperature transport was identified as ballistic for the base width less than 500 /spl Aring/. For the base width in the range of 500-2000 /spl Aring/ there are both ballistic and quasiballistic (hot electron diffusion) transport mechanisms. For the base width greater than 2000 /spl Aring/ we observe transport of thermalized electrons with long transit times. These results correlate well with the experimentally measured base delay times.< >
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1993.347278