Direct use of a MESFET physical model, in nonlinear CAD

The authors present a CAD (computer-aided design) tool which combines a novel quasi-two-dimensional MESFET physical model with an efficient nonlinear circuit analysis technique. Device technological parameters (dimensions, doping profile, etc.) can be directly related to electrical performance with...

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Bibliographic Details

Main Authors:	Rodrigues, P.J.C., Howes, M.J., Richardson, J.R.
Format:	Conference Proceeding
Language:	eng
Subjects:	Availability Circuit analysis Circuit simulation Doping profiles Electrons MESFET circuits Nonlinear equations Poisson equations Semiconductor process modeling Thermal conductivity
Online Access:	Request full text
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