Ultra-Low Voltage MEMS Resonator Based on RSG-MOSFET

16MHz and 91MHz micromechanical resonators based on the Resonant Suspended-gate MOSFET (RSG-MOSFET) architecture are demonstrated. A fabrication process using a polysilicon sacrificial layer and an aluminum-silicon alloy (AlSi 1%) suspended-gate was developed. Static and dynamic electrical character...

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Main Authors: Abele, N., Segueni, K., Boucart, K., Casset, F., Legrand, B., Buchaillot, L., Ancey, P., Ionescu, A.M.
Format: Conference Proceeding
Language:English
Subjects:
Aluminum alloys
Electric variables
Fabrication
Micromechanical devices
MOSFET circuits
Q factor
Resonance
Resonant frequency
Threshold voltage
Tuning
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creator Abele, N.
Segueni, K.
Boucart, K.
Casset, F.
Legrand, B.
Buchaillot, L.
Ancey, P.
Ionescu, A.M.
description 16MHz and 91MHz micromechanical resonators based on the Resonant Suspended-gate MOSFET (RSG-MOSFET) architecture are demonstrated. A fabrication process using a polysilicon sacrificial layer and an aluminum-silicon alloy (AlSi 1%) suspended-gate was developed. Static and dynamic electrical characteristics of the Clamped-Clamped beam (CC-beam) resonator have been investigated in order to explain the device behavior. The lowest reported actuation voltage for a MEMS resonator, less than 1V, makes the resonator compatible with standard CMOS voltages. The actuation voltage dependence on the MOSFET characteristics and the threshold voltage is explained. A resonant frequency tuning of 750kHz was achieved by a 240mV DC voltage variation, and a quality factor of Q= 641 was calculated from measurements in vacuum.
doi_str_mv 10.1109/MEMSYS.2006.1627941
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fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_1627941</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1627941</ieee_id><sourcerecordid>1627941</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-b1a62dcaafbe418826a40d971403f748e18c37239eb50cd4332c50165c93cae43</originalsourceid><addsrcrecordid>eNotj8tKw0AUQAdUsK1-QTfzAxPvnbnzWmqprZBQaKzgqkwmE4nERpKA-PcqdnXgLA4cxpYIGSL4u2JdlK9lJgFMhkZaT3jB5mAdKE9W60s2Q3AkjPf-ms3H8R1AApKfMTp00xBE3n_xl76bwlvifzW-T2N_ClM_8Icwppr3J74vN6LYlY_r5xt21YRuTLdnLtjh1662It9tnlb3uWjR6klUGIysYwhNlQidkyYQ1N4igWosuYQuKiuVT5WGWJNSMmpAo6NXMSRSC7b877YppePn0H6E4ft4PlQ_w9pCzw</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Ultra-Low Voltage MEMS Resonator Based on RSG-MOSFET</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Abele, N. ; Segueni, K. ; Boucart, K. ; Casset, F. ; Legrand, B. ; Buchaillot, L. ; Ancey, P. ; Ionescu, A.M.</creator><creatorcontrib>Abele, N. ; Segueni, K. ; Boucart, K. ; Casset, F. ; Legrand, B. ; Buchaillot, L. ; Ancey, P. ; Ionescu, A.M.</creatorcontrib><description>16MHz and 91MHz micromechanical resonators based on the Resonant Suspended-gate MOSFET (RSG-MOSFET) architecture are demonstrated. A fabrication process using a polysilicon sacrificial layer and an aluminum-silicon alloy (AlSi 1%) suspended-gate was developed. Static and dynamic electrical characteristics of the Clamped-Clamped beam (CC-beam) resonator have been investigated in order to explain the device behavior. The lowest reported actuation voltage for a MEMS resonator, less than 1V, makes the resonator compatible with standard CMOS voltages. The actuation voltage dependence on the MOSFET characteristics and the threshold voltage is explained. A resonant frequency tuning of 750kHz was achieved by a 240mV DC voltage variation, and a quality factor of Q= 641 was calculated from measurements in vacuum.</description><identifier>ISSN: 1084-6999</identifier><identifier>ISBN: 0780394755</identifier><identifier>ISBN: 9780780394759</identifier><identifier>DOI: 10.1109/MEMSYS.2006.1627941</identifier><language>eng</language><publisher>IEEE</publisher><subject>Aluminum alloys ; Electric variables ; Fabrication ; Micromechanical devices ; MOSFET circuits ; Q factor ; Resonance ; Resonant frequency ; Threshold voltage ; Tuning</subject><ispartof>19th IEEE International Conference on Micro Electro Mechanical Systems, 2006, p.882-885</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1627941$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>310,311,786,790,795,796,2071,4069,4070,27958,55271</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1627941$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Abele, N.</creatorcontrib><creatorcontrib>Segueni, K.</creatorcontrib><creatorcontrib>Boucart, K.</creatorcontrib><creatorcontrib>Casset, F.</creatorcontrib><creatorcontrib>Legrand, B.</creatorcontrib><creatorcontrib>Buchaillot, L.</creatorcontrib><creatorcontrib>Ancey, P.</creatorcontrib><creatorcontrib>Ionescu, A.M.</creatorcontrib><title>Ultra-Low Voltage MEMS Resonator Based on RSG-MOSFET</title><title>19th IEEE International Conference on Micro Electro Mechanical Systems</title><addtitle>MEMSYS</addtitle><description>16MHz and 91MHz micromechanical resonators based on the Resonant Suspended-gate MOSFET (RSG-MOSFET) architecture are demonstrated. A fabrication process using a polysilicon sacrificial layer and an aluminum-silicon alloy (AlSi 1%) suspended-gate was developed. Static and dynamic electrical characteristics of the Clamped-Clamped beam (CC-beam) resonator have been investigated in order to explain the device behavior. The lowest reported actuation voltage for a MEMS resonator, less than 1V, makes the resonator compatible with standard CMOS voltages. The actuation voltage dependence on the MOSFET characteristics and the threshold voltage is explained. A resonant frequency tuning of 750kHz was achieved by a 240mV DC voltage variation, and a quality factor of Q= 641 was calculated from measurements in vacuum.</description><subject>Aluminum alloys</subject><subject>Electric variables</subject><subject>Fabrication</subject><subject>Micromechanical devices</subject><subject>MOSFET circuits</subject><subject>Q factor</subject><subject>Resonance</subject><subject>Resonant frequency</subject><subject>Threshold voltage</subject><subject>Tuning</subject><issn>1084-6999</issn><isbn>0780394755</isbn><isbn>9780780394759</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2006</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotj8tKw0AUQAdUsK1-QTfzAxPvnbnzWmqprZBQaKzgqkwmE4nERpKA-PcqdnXgLA4cxpYIGSL4u2JdlK9lJgFMhkZaT3jB5mAdKE9W60s2Q3AkjPf-ms3H8R1AApKfMTp00xBE3n_xl76bwlvifzW-T2N_ClM_8Icwppr3J74vN6LYlY_r5xt21YRuTLdnLtjh1662It9tnlb3uWjR6klUGIysYwhNlQidkyYQ1N4igWosuYQuKiuVT5WGWJNSMmpAo6NXMSRSC7b877YppePn0H6E4ft4PlQ_w9pCzw</recordid><startdate>2006</startdate><enddate>2006</enddate><creator>Abele, N.</creator><creator>Segueni, K.</creator><creator>Boucart, K.</creator><creator>Casset, F.</creator><creator>Legrand, B.</creator><creator>Buchaillot, L.</creator><creator>Ancey, P.</creator><creator>Ionescu, A.M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2006</creationdate><title>Ultra-Low Voltage MEMS Resonator Based on RSG-MOSFET</title><author>Abele, N. ; Segueni, K. ; Boucart, K. ; Casset, F. ; Legrand, B. ; Buchaillot, L. ; Ancey, P. ; Ionescu, A.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-b1a62dcaafbe418826a40d971403f748e18c37239eb50cd4332c50165c93cae43</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Aluminum alloys</topic><topic>Electric variables</topic><topic>Fabrication</topic><topic>Micromechanical devices</topic><topic>MOSFET circuits</topic><topic>Q factor</topic><topic>Resonance</topic><topic>Resonant frequency</topic><topic>Threshold voltage</topic><topic>Tuning</topic><toplevel>online_resources</toplevel><creatorcontrib>Abele, N.</creatorcontrib><creatorcontrib>Segueni, K.</creatorcontrib><creatorcontrib>Boucart, K.</creatorcontrib><creatorcontrib>Casset, F.</creatorcontrib><creatorcontrib>Legrand, B.</creatorcontrib><creatorcontrib>Buchaillot, L.</creatorcontrib><creatorcontrib>Ancey, P.</creatorcontrib><creatorcontrib>Ionescu, A.M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library Online</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Abele, N.</au><au>Segueni, K.</au><au>Boucart, K.</au><au>Casset, F.</au><au>Legrand, B.</au><au>Buchaillot, L.</au><au>Ancey, P.</au><au>Ionescu, A.M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Ultra-Low Voltage MEMS Resonator Based on RSG-MOSFET</atitle><btitle>19th IEEE International Conference on Micro Electro Mechanical Systems</btitle><stitle>MEMSYS</stitle><date>2006</date><risdate>2006</risdate><spage>882</spage><epage>885</epage><pages>882-885</pages><issn>1084-6999</issn><isbn>0780394755</isbn><isbn>9780780394759</isbn><abstract>16MHz and 91MHz micromechanical resonators based on the Resonant Suspended-gate MOSFET (RSG-MOSFET) architecture are demonstrated. A fabrication process using a polysilicon sacrificial layer and an aluminum-silicon alloy (AlSi 1%) suspended-gate was developed. Static and dynamic electrical characteristics of the Clamped-Clamped beam (CC-beam) resonator have been investigated in order to explain the device behavior. The lowest reported actuation voltage for a MEMS resonator, less than 1V, makes the resonator compatible with standard CMOS voltages. The actuation voltage dependence on the MOSFET characteristics and the threshold voltage is explained. A resonant frequency tuning of 750kHz was achieved by a 240mV DC voltage variation, and a quality factor of Q= 641 was calculated from measurements in vacuum.</abstract><pub>IEEE</pub><doi>10.1109/MEMSYS.2006.1627941</doi><tpages>4</tpages></addata></record>
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subjects Aluminum alloys
Electric variables
Fabrication
Micromechanical devices
MOSFET circuits
Q factor
Resonance
Resonant frequency
Threshold voltage
Tuning
title Ultra-Low Voltage MEMS Resonator Based on RSG-MOSFET
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-09-22T15%3A31%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Ultra-Low%20Voltage%20MEMS%20Resonator%20Based%20on%20RSG-MOSFET&rft.btitle=19th%20IEEE%20International%20Conference%20on%20Micro%20Electro%20Mechanical%20Systems&rft.au=Abele,%20N.&rft.date=2006&rft.spage=882&rft.epage=885&rft.pages=882-885&rft.issn=1084-6999&rft.isbn=0780394755&rft.isbn_list=9780780394759&rft_id=info:doi/10.1109/MEMSYS.2006.1627941&rft_dat=%3Cieee_6IE%3E1627941%3C/ieee_6IE%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i175t-b1a62dcaafbe418826a40d971403f748e18c37239eb50cd4332c50165c93cae43%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1627941&rfr_iscdi=true