Ultra-Low Voltage MEMS Resonator Based on RSG-MOSFET

16MHz and 91MHz micromechanical resonators based on the Resonant Suspended-gate MOSFET (RSG-MOSFET) architecture are demonstrated. A fabrication process using a polysilicon sacrificial layer and an aluminum-silicon alloy (AlSi 1%) suspended-gate was developed. Static and dynamic electrical character...

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Bibliographic Details
Main Authors: Abele, N., Segueni, K., Boucart, K., Casset, F., Legrand, B., Buchaillot, L., Ancey, P., Ionescu, A.M.
Format: Conference Proceeding
Language:English
Subjects:
Aluminum alloys
Electric variables
Fabrication
Micromechanical devices
MOSFET circuits
Q factor
Resonance
Resonant frequency
Threshold voltage
Tuning
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Summary:16MHz and 91MHz micromechanical resonators based on the Resonant Suspended-gate MOSFET (RSG-MOSFET) architecture are demonstrated. A fabrication process using a polysilicon sacrificial layer and an aluminum-silicon alloy (AlSi 1%) suspended-gate was developed. Static and dynamic electrical characteristics of the Clamped-Clamped beam (CC-beam) resonator have been investigated in order to explain the device behavior. The lowest reported actuation voltage for a MEMS resonator, less than 1V, makes the resonator compatible with standard CMOS voltages. The actuation voltage dependence on the MOSFET characteristics and the threshold voltage is explained. A resonant frequency tuning of 750kHz was achieved by a 240mV DC voltage variation, and a quality factor of Q= 641 was calculated from measurements in vacuum.
ISSN:1084-6999
DOI:10.1109/MEMSYS.2006.1627941