Temperature dependence of indium nitride oxidation properties

The oxidation of InN and In-rich InN films grown on (0001) sapphires by low-pressure MOCVD has been investigated. X-ray diffraction (XRD) measurements show that stoichiometric InN is difficult to be oxidized at the temperature lower than 400/spl deg/C. However, nonstoichiometric In-rich InN can be o...

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Bibliographic Details
Main Authors: Liu, B., Zhang, R., Bi, Z.X., Xie, Z.L., Xiu, X.Q., Fu, S.W., Ye, Y.D., Gu, S.L., Shen, B., Shi, Y., Zheng, Y.D.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Gallium nitride
Indium
Microelectronics
Molecular beam epitaxial growth
Optical films
Oxidation
Photonic band gap
Scanning electron microscopy
Temperature dependence
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Summary:The oxidation of InN and In-rich InN films grown on (0001) sapphires by low-pressure MOCVD has been investigated. X-ray diffraction (XRD) measurements show that stoichiometric InN is difficult to be oxidized at the temperature lower than 400/spl deg/C. However, nonstoichiometric In-rich InN can be oxidized at low temperature even as low as 300/spl deg/C. And In-rich InN films are fully oxidized at 450/spl deg/C. According to the scanning electron microscope (SEM) images, the oxidization of metal In grains on the surface of In-rich InN film is the main process at the temperature lower than 400/spl deg/C. Above 400/spl deg/C, metal In and InN begin to be oxidized simultaneously, which also indicates that stoichiometric InN is difficult to be oxidized at the temperature less than 400/spl deg/C.
DOI:10.1109/SIM.2005.1511389