Effective interfaces in silicon heterojunction solar cells

Thin hydrogenated amorphous silicon (a-Si:H) layers deposited by hot-wire chemical vapor deposition (HWCVD) are investigated for use in silicon heterojunction (SHJ) solar cells on p-type crystalline silicon wafers. A requirement for excellent emitter quality is minimization of interface recombinatio...

Full description

Saved in:
Bibliographic Details
Main Authors: Wang, T.H., Iwaniczko, E., Page, M.R., Levi, D.H., Yan, Y., Yelundur, V., Branz, H.M., Rohatgi, A., Wang, Q.
Format: Conference Proceeding
Language:English
Subjects:
Amorphous silicon
Chemical technology
Chemical vapor deposition
Epitaxial growth
Heterojunctions
Laboratories
Passivation
Photovoltaic cells
Renewable energy resources
Spontaneous emission
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Thin hydrogenated amorphous silicon (a-Si:H) layers deposited by hot-wire chemical vapor deposition (HWCVD) are investigated for use in silicon heterojunction (SHJ) solar cells on p-type crystalline silicon wafers. A requirement for excellent emitter quality is minimization of interface recombination. Best results necessitate immediate a-Si:H deposition and an abrupt and flat interface to the c-Si substrate. We obtain a record planar HJ efficiency of 16.9% with a high V/sub oc/ of 652 mV on p-type float-zone (FZ) silicon substrates with HWCVD a-Si:H(n) emitters and screen-printed Al-BSF contacts. H pretreatment by HWCVD is beneficial when limited to a very short period prior to emitter deposition.
ISSN:0160-8371
DOI:10.1109/PVSC.2005.1488290