Zn-Implanted GaAs with minimized annealing redistribution

Redistribution associated with the annealing of high-dose Zn implants has been investigated in GaAs. Annealing times as short as ∼ 1 s have been implemented through direct radiant heating from an incoherent light source. It is shown that Zn can redistribute to depths of ∼ 1 µm even on annealing for...

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Bibliographic Details
Published in:IEEE electron device letters 1983-10, Vol.4 (10), p.356-357
Main Authors: Davies, D.E., McNally, P.J.
Format: Article
Language:English
Subjects:
Annealing
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Doping
Exact sciences and technology
Gallium arsenide
Heating
Implants
Impurities: concentration, distribution, and gradients
Laboratories
Lamps
Light sources
Physics
Structure of solids and liquids
crystallography
Temperature
Zinc
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Summary:Redistribution associated with the annealing of high-dose Zn implants has been investigated in GaAs. Annealing times as short as ∼ 1 s have been implemented through direct radiant heating from an incoherent light source. It is shown that Zn can redistribute to depths of ∼ 1 µm even on annealing for only 10 s. Shallower layers (∼ 0.25 µm) and close to anticipated As-implanted depths require a further reduction in the annealing time to ∼ 1 s.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1983.25761