Loading…
Stable SRAM cell design for the 32 nm node and beyond
SRAM cell stability will be a primary concern for future technologies due to variability and decreasing power supply voltages. 6T-SRAM can be optimized for stability by choosing the cell layout, device threshold voltages, and the /spl beta/ ratio. 8T-SRAM, however, provides a much greater enhancemen...
Saved in:
Main Authors: | , , , , , , , , , , , |
---|---|
Format: | Conference Proceeding |
Language: | English |
Subjects: | |
Citations: | Items that cite this one |
Online Access: | Request full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | SRAM cell stability will be a primary concern for future technologies due to variability and decreasing power supply voltages. 6T-SRAM can be optimized for stability by choosing the cell layout, device threshold voltages, and the /spl beta/ ratio. 8T-SRAM, however, provides a much greater enhancement in stability by eliminating cell disturbs during a read access, thus facilitating continued technology scaling. We demonstrate the smallest 6T (0.124/spl mu/m/sup 2/ half-cell) and full 8T (0.1998/spl mu/m/sup 2/) cells to date. |
---|---|
ISSN: | 0743-1562 |
DOI: | 10.1109/.2005.1469239 |