Improved selectivity of SAF free layer in high density MRAM array

In this paper, switching properties of the patterned sub-micron MTJ cells incorporating NiFe single and SAF as the free layer of MTJ were investigated. MTJs are composed of PtMn 15/CoFe 1.5/Ru 0.8/CoFe 1.5/Al-O/NiFe t/sub 1/(/Ru 0.8/NiFe t/sub 2/) (nm) with the different thickness (t/sub 1/ and t/su...

Full description

Saved in:
Bibliographic Details
Main Authors: Injun Hwang, Woncheol Jeong, Jaehyun Park, Wanjun Park, Youngman Jang, Youngjin Cho, Soonwon Hwang, Taewan Kim
Format: Conference Proceeding
Language:English
Subjects:
Magnetoresistance
Performance evaluation
Remanence
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this paper, switching properties of the patterned sub-micron MTJ cells incorporating NiFe single and SAF as the free layer of MTJ were investigated. MTJs are composed of PtMn 15/CoFe 1.5/Ru 0.8/CoFe 1.5/Al-O/NiFe t/sub 1/(/Ru 0.8/NiFe t/sub 2/) (nm) with the different thickness (t/sub 1/ and t/sub 2/) of NiFe and fabricated with the standard photo-lithography process to the size of 0.3 /spl times/ 1.0 /spl mu/m/sup 2/. Remanence measurements were performed to ensure vortex states. The magnetoresistance of the MTJs were also studied.
ISSN:2150-4598
2150-4601
DOI:10.1109/INTMAG.2005.1464425