Geometry optimization of TMR current sensors for on-chip IC testing

It was demonstrated that submicron and micron-sized tunnel magnetoresistive sensors having similar structure as magnetic random access memories can be used as very sensitive current sensors in /spl mu/A-mA ranges, with a resolution of 5 /spl mu/A. A number of variations in aspect ratio and dimension...

Full description

Saved in:
Bibliographic Details
Main Authors: Le Phan, K., Boeve, H., Vanhelmont, F., Ikkink, T.
Format: Conference Proceeding
Language:English
Subjects:
Anisotropic magnetoresistance
Geometry
Heating
Integrated circuit testing
Magnetic anisotropy
Magnetic hysteresis
Magnetic sensors
Shape
Temperature sensors
Tunneling magnetoresistance
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:It was demonstrated that submicron and micron-sized tunnel magnetoresistive sensors having similar structure as magnetic random access memories can be used as very sensitive current sensors in /spl mu/A-mA ranges, with a resolution of 5 /spl mu/A. A number of variations in aspect ratio and dimensions, ranging from submicron to several microns, have been included in the design in order to investigate the influence of the sensor geometry on sensor properties. The influence of the shape anisotropy on the sensitivity is dominant over the current line width. Hysteresis investigations revealed that hysteresis of micron-sized sensors remains low and does not change significantly with the aspect ratio, while hysteresis of sensors with
ISSN:2150-4598
2150-4601
DOI:10.1109/INTMAG.2005.1464060