On-the-fly characterization of NBTI in ultra-thin gate oxide PMOSFET's

We propose a new methodology to characterize the negative bias temperature instability (NBTI) degradation without inherent recovery. The extracted parameters are the linear drain current, the threshold voltage and the transconductance. We compare the new and the usual methodologies and show a logari...

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Bibliographic Details
Main Authors: Denais, M., Parthasarathy, C., Ribes, G., Rey-Tauriac, Y., Revil, N., Bravaix, A., Huard, V., Perrier, F.
Format: Conference Proceeding
Language:English
Subjects:
Current measurement
Degradation
MOSFET circuits
Niobium compounds
Pulse measurements
Stress measurement
Time measurement
Titanium compounds
Transconductance
Voltage
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Summary:We propose a new methodology to characterize the negative bias temperature instability (NBTI) degradation without inherent recovery. The extracted parameters are the linear drain current, the threshold voltage and the transconductance. We compare the new and the usual methodologies and show a logarithmic time dependence of both the degradation and the recovery. The hole trapping (detrapping) is directly correlated to the V/sub T/ degradation (recovery), and plays the main role in the NBTI in ultra-thin gate-oxide PMOSFET's.
DOI:10.1109/IEDM.2004.1419080