Build-in reliability analysis for circuit design in the nanometer technology era

In this paper, the methodology of the reliability modeling and simulation for the state-of-the-art technology is presented. The extraction for HCI (Hot Carrier Injection) and NBTI (Negative Bias Temperature Instability) for both lifetime and aged model parameter method is discussed. The integration...

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Bibliographic Details
Main Authors: Zhihong Liu, Weiquan Zhang, Fuchen Mu
Format: Conference Proceeding
Language:English
Subjects:
Aging
Circuit analysis
Circuit simulation
Circuit synthesis
Hot carrier injection
Human computer interaction
Integrated circuit reliability
Negative bias temperature instability
Niobium compounds
Titanium compounds
Online Access:Request full text
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Summary:In this paper, the methodology of the reliability modeling and simulation for the state-of-the-art technology is presented. The extraction for HCI (Hot Carrier Injection) and NBTI (Negative Bias Temperature Instability) for both lifetime and aged model parameter method is discussed. The integration of these models into the transistor level and gate level simulation flow can be used by the designers to satisfy the reliability requirements.
DOI:10.1109/ICICDT.2004.1309946