Body-tied double-gate SONOS flash (omega flash) memory device built on bulk Si wafer

In this paper, for the first time, a body-tied double-gate SONOS flash memory device using bulk Si wafer is proposed. Brief fabrication steps and measured characteristics are presented.

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Bibliographic Details
Main Authors: Il Hwan Cho, Tai-Su Park, Si Young Choi, Jong Duk Lee, Jong-Ho Lee
Format: Conference Proceeding
Language:English
Subjects:
Computer science
Etching
Fabrication
FinFETs
Flash memory
Ion implantation
Materials science and technology
Research and development
Silicon compounds
SONOS devices
Online Access:Request full text
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Description
Summary:In this paper, for the first time, a body-tied double-gate SONOS flash memory device using bulk Si wafer is proposed. Brief fabrication steps and measured characteristics are presented.
DOI:10.1109/DRC.2003.1226904