Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions

Si/SiGe resonant interband tunnel diodes (RITDs) employing /spl delta/-doping spikes that demonstrate negative differential resistance (NDR) at room temperature are presented. Efforts have focused on improving the tunnel diode peak-to-valley current ratio (PVCR) figure-of-merit, as well as addressin...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2003-09, Vol.50 (9), p.1876-1884
Main Authors: Niu Jin, Sung-Yong Chung, Rice, A.T., Berger, P.R., Thompson, P.E., Rivas, C., Lake, R., Sudirgo, S., Kempisty, J.J., Curanovic, B., Rommel, S.L., Hirschman, K.D., Kurinec, S.K., Chi, P.H., Simons, D.S.
Format: Article
Language:English
Subjects:
Annealing
Boron
Cladding
Current density
Diffusion processes
Epitaxial growth
Germanium alloys
Manufacturability
Molecular beam epitaxy
Resonant tunneling diodes
Semiconductor growth
Semiconductor materials
Silicon
Silicon alloys
Silicon germanides
Spikes
Tunnel diodes
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Summary:Si/SiGe resonant interband tunnel diodes (RITDs) employing /spl delta/-doping spikes that demonstrate negative differential resistance (NDR) at room temperature are presented. Efforts have focused on improving the tunnel diode peak-to-valley current ratio (PVCR) figure-of-merit, as well as addressing issues of manufacturability and CMOS integration. Thin SiGe layers sandwiching the B /spl delta/-doping spike used to suppress B out-diffusion are discussed. A room-temperature PVCR of 3.6 was measured with a peak current density of 0.3 kA/cm/sup 2/. Results clearly show that by introducing SiGe layers to clad the B /spl delta/-doping layer, B diffusion is suppressed during post-growth annealing, which raises the thermal budget. A higher RTA temperature appears to be more effective in reducing defects and results in a lower valley current and higher PVCR. RITDs grown by selective area molecular beam epitaxy (MBE) have been realized inside of low-temperature oxide openings, with performance comparable with RITDs grown on bulk substrates.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2003.815375