A SiGe WCDMA/DCS dual-band RF front-end receiver

A WCDMA/DCS dual-band RF front-end receiver IC fabricated in a 0.35 /spl mu/m SiGe BiCMOS technology is presented. This RF receiver uses a novel fully-differential LNA with dual input-stages to replace the requirement of paralleling two similar LNAs in previous dual-band designs. This chip dissipate...

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Bibliographic Details
Main Authors: June-Ming Hsu, Yung-Hui Chen, Shin-Fu Chen, Ming-Ching Kuo, Peng-Un Su
Format: Conference Proceeding
Language:English
Subjects:
BiCMOS integrated circuits
Distributed control
Dual band
Gain measurement
Germanium silicon alloys
Multiaccess communication
Radio frequency
Radiofrequency integrated circuits
Silicon germanium
Voltage measurement
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Description
Summary:A WCDMA/DCS dual-band RF front-end receiver IC fabricated in a 0.35 /spl mu/m SiGe BiCMOS technology is presented. This RF receiver uses a novel fully-differential LNA with dual input-stages to replace the requirement of paralleling two similar LNAs in previous dual-band designs. This chip dissipates 24 mA from a 2.7 V supply and can be used in direct-conversion or low-IF receivers. The measured voltage gain, P1dB and iIP3 are 32 dB, -25 dBm and -15 dBm, respectively.
ISSN:1529-2517
2375-0995
DOI:10.1109/RFIC.2003.1213886