Design techniques to combat process, temperature and supply variations in Bluetooth RFIC

A fully integrated Bluetooth RF transceiver with sensitivity up to -85 dBm with /spl plusmn/2 dB process variation has been achieved. The sensitivity only varies /spl plusmn/1 dB from 2.7 to 3.3V and /spl plusmn/1.5 dB from -40 to +90/spl deg/C. This RFIC is fabricated using a 0.35/spl mu/m CMOS pro...

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Bibliographic Details
Main Authors: Tee, Y.T., Seng, Y.H., Boon, L.P., Hung, T.K., Tachi, S., Ling, K.S., Murakami, T., Hui, S.J., Tiong, L.C., Choon, T.L., Kheng, W.W., Jun, X.Q., Meng, L.C., Hwi, L.S., Wei, X., Toh, A.
Format: Conference Proceeding
Language:English
Subjects:
Band pass filters
Bluetooth
CMOS process
Radio frequency
Radiofrequency integrated circuits
Signal processing
Switches
Temperature sensors
Transceivers
Voltage-controlled oscillators
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Summary:A fully integrated Bluetooth RF transceiver with sensitivity up to -85 dBm with /spl plusmn/2 dB process variation has been achieved. The sensitivity only varies /spl plusmn/1 dB from 2.7 to 3.3V and /spl plusmn/1.5 dB from -40 to +90/spl deg/C. This RFIC is fabricated using a 0.35/spl mu/m CMOS process and can withstand a maximum input power of +5 dBm for 0.1% BER.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2003.1211028