Direct-tunneling gate leakage current in double-gate and ultrathin body MOSFETs

The impact of energy quantization on gate tunneling current is studied for double-gate and ultrathin body MOSFETs. Reduced vertical electric field and quantum confinement in the channel of these thin-body devices causes a decrease in gate leakage by as much as an order of magnitude. The effects of b...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2002-12, Vol.49 (12), p.2288-2295
Main Authors: Leland Chang, Yang, K.J., Yee-Chia Yeo, Polishchuk, I., Tsu-Jae King, Chenming Hu
Format: Article
Language:English
Subjects:
Current
Dielectric films
MOSFETs
Silicon materials/devices
Tunneling
Voltage control
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Summary:The impact of energy quantization on gate tunneling current is studied for double-gate and ultrathin body MOSFETs. Reduced vertical electric field and quantum confinement in the channel of these thin-body devices causes a decrease in gate leakage by as much as an order of magnitude. The effects of body thickness scaling and channel crystallographic orientation are studied. The impact of threshold voltage control solutions, including doped channel and asymmetric double-gate structures is also investigated. Future gate dielectric thickness scaling and the use of high-/spl kappa/ gate dielectrics are discussed.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2002.807446