An investigation of the origins of the variable proton tolerance in multiple SiGe HBT BiCMOS technology generations

This paper presents the first investigation of the physical origins of the observed variable proton tolerance in multiple SiGe HBT BiCMOS technology generations. We use the combination of an extensive set of newly measured proton data on distinct SiGe HBT BiCMOS technology generations, detailed cali...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2002-12, Vol.49 (6), p.3203-3207
Main Authors: Cressler, J.D., Krithivasan, R., Gang Zhang, Guofu Niu, Marshall, P.W., Kim, H.S., Reed, R.A., Palmer, M.J., Joseph, A.J.
Format: Article
Language:English
Subjects:
Analytical models
BiCMOS integrated circuits
Calibration
CMOS
CMOS technology
Electric variables measurement
Emittance
Germanium silicon alloys
Heterojunction bipolar transistors
Origins
Oxides
Protons
Radiation tolerance
Silicon germanides
Silicon germanium
Space technology
Stress measurement
Tolerances
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Summary:This paper presents the first investigation of the physical origins of the observed variable proton tolerance in multiple SiGe HBT BiCMOS technology generations. We use the combination of an extensive set of newly measured proton data on distinct SiGe HBT BiCMOS technology generations, detailed calibrated 2-D MEDICI simulations for both the SiGe HBT and Si CMOS devices, as well as reverse-bias emitter-base and forward-bias electrical stress data to aid the analysis. We find that the scaling-induced increase in the emitter-base electric field under the spacer oxide in the SiGe HBT is primarily responsible for the degraded radiation tolerance with technology scaling, while the decrease in shallow-trench thickness is largely responsible for the improved nFET radiation tolerance with technology scaling.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2002.805362