Optical gain in GaInNAs/GaAs multi-quantum well structures

We present the experimental investigation of the optical gain in GaInNAs/GaAs multi-quantum well structures using the variable stripe length method. The amplified spontaneous edge emission was measured at different excitation intensities and stripe lengths. We observed an exponential increase in the...

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Bibliographic Details
Main Authors: Kvietkova, J., Hetterich, M., de Jauregui, D.S., Egorov, A.Yu, Riechert, H.
Format: Conference Proceeding
Language:English
Subjects:
Gain measurement
Gallium arsenide
Indium gallium arsenide
Length measurement
Nitrogen
Optical materials
Optical saturation
Plasma temperature
Quantum well devices
Stimulated emission
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Summary:We present the experimental investigation of the optical gain in GaInNAs/GaAs multi-quantum well structures using the variable stripe length method. The amplified spontaneous edge emission was measured at different excitation intensities and stripe lengths. We observed an exponential increase in the edge emission intensity with increasing excitation density. The obtained values of the optical gain are typically in the order of 20 cm/sup -1/.
DOI:10.1109/ASDAM.2002.1088500