Design Technology Co-Optimization and Time-Efficient Verification for Enhanced Pin Accessibility in the Post-3-nm Node

As the technology nodes approach 3 nm and beyond, nanosheet FETs (NSFETs) are replacing FinFETs. However, despite the migration of devices from FinFETs to NSFETs, few studies report the impact of NSFETs in the digital VLSI's perspective. In this paper, we present a study of how the latest devic...

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Bibliographic Details
Published in:IEEE access 2024, Vol.12, p.97557-97571
Main Authors: Jeong, Jaehoon, Shin, Yunjeong, Lee, Hyundong, Ko, Jonghyun, Kim, Jongbeom, Song, Taigon
Format: Article
Language:English
Subjects:
FinFETs
Layout
library
Metals
nanosheet
NSFET
Optimization methods
pin optimization
Pins
Routing
standard cell layout
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Summary:As the technology nodes approach 3 nm and beyond, nanosheet FETs (NSFETs) are replacing FinFETs. However, despite the migration of devices from FinFETs to NSFETs, few studies report the impact of NSFETs in the digital VLSI's perspective. In this paper, we present a study of how the latest device technology, back end of line (BEOL), and the designs of NSFETs aid each other for enhanced pin accessibility in layout and standard cell library design for less routing congestion and low power consumption. For this objective, 1) we discuss five layout design methodologies that are co-optimized with device technology to tackle the pin accessibility issues that arise in standard cell designs in extremely-low routing resource environments (e.g., 4 Signal Tracks), 2) we introduce pin accessibility analysis procedures before chip P&R, and 3) we report how local trench contact (LTC) helps in reducing cell tracks for 5 track cells and less. Using our methodology, we improve design metrics such as power consumption, total area, and wirelength by 11.0%, 13.2%, and 16.0%, respectively in full-chip scale designs. By our study, we expect the routing congestion issues that additionally occur in advanced technology nodes to be handled and better full-chip designs to be done in 3 nm and beyond.
ISSN:2169-3536
2169-3536
DOI:10.1109/ACCESS.2024.3427332