Light Dependent Negative Differential Resistance and Resistive Switching in Oxide Semiconductors

The emerging light-induced phenomena in optical materials possess significant potential for use in multifunctional optoelectronic devices. Here, the negative differential resistance (NDR) and bipolar-resistive switching; first of its kind in ZnO-ZnCr2O4 nanocomposite nanowalls are proposed. The NDR...

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Bibliographic Details
Published in:IEEE photonics technology letters 2024-08, Vol.36 (15), p.937-940
Main Authors: Sumanth, Arige, Singhal, Shrikant, Lakshmi Ganapathi, Kolla, Ramachandra Rao, M. S., Dixit, Tejendra
Format: Article
Language:English
Subjects:
bipolar resistive switching
Charge carriers
Current carriers
II-VI semiconductor materials
light dependent resistive switching
Luminous intensity
Memory devices
memristor
Memristors
Nanocomposites
Nanoscale devices
Negative differential resistance
Optical materials
Optical switches
Optoelectronic devices
Resistance
Switching
Zinc oxide
ZnO-ZnCr2O4
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Summary:The emerging light-induced phenomena in optical materials possess significant potential for use in multifunctional optoelectronic devices. Here, the negative differential resistance (NDR) and bipolar-resistive switching; first of its kind in ZnO-ZnCr2O4 nanocomposite nanowalls are proposed. The NDR effect can be modified by modulating the light power intensity, resulting in an improved peak-to-valley ratio (PVR) of 2. Combined effects of the trapping of charge carriers at interface states and tunneling assisted transport are attributed to observed NDR and resistive switching. In addition to offering novel perspectives on the switching features, this study emphasizes the planar configuration of the memristive device at the micrometer scale. Moreover, we provide a promising mechanism for comprehending the coexistence of NDR and resistive switching effects in oxide memristive devices, which advances their utilization in multi-functional devices.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2024.3411603