Switching of GaN CAVET With Quasi-Monolithic Integrated HEMT Gate Driver

In this letter, a vertical GaN power transistor driven by lateral devices fabricated in the same technology is demonstrated. The technology combines a co-integrated large area current aperture vertical electron transistor (CAVET) with high electron mobility transistors (HEMTs) for the realization of...

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Bibliographic Details
Published in:IEEE electron device letters 2023-08, Vol.44 (8), p.1332-1335
Main Authors: Basler, Michael, Doring, Philipp, Monch, Stefan, Reiner, Richard, Mikulla, Michael, Quay, Rudiger
Format: Article
Language:English
Subjects:
Apertures
Current aperture vertical electron transistor (CAVET)
driver circuits
Driver stages
Functional integration
Gallium nitride
Gallium nitrides
gate driver
Gate drivers
HEMTs
High electron mobility transistors
Logic gates
monolithic integrated circuits
power integrated circuits
Power semiconductor devices
Substrates
Switches
Switching
Transistors
Voltage measurement
Waveforms
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Summary:In this letter, a vertical GaN power transistor driven by lateral devices fabricated in the same technology is demonstrated. The technology combines a co-integrated large area current aperture vertical electron transistor (CAVET) with high electron mobility transistors (HEMTs) for the realization of the driver on a GaN substrate. The quasi-monolithic integrated driver stage consists of two HEMT devices in a push-pull configuration. The CAVET and HEMTs are characterized, separated, packaged, and measured in a double pulse test setup with inductive load. The voltage signals of the HEMT driver with CAVET are shown in continuous operation up to 5 MHz and extreme duty-cycles. In pulsed operation, switching characteristics and waveforms under load up to 120 V and 4.1 A are shown with turn-on/-off switching times of 17.3/2.8 ns. Finally, this work demonstrates a GaN technology that combines the functional integration of a driver stage with a vertical power transistor and thus opens the pathway to continue lateral GaN power integration in vertical device concepts.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2023.3290608