Excellent Reliability performances of a truly 5V nBOXFET for Automotive and IOT applications

In a Fully-Depleted Silicon-On-Insulator (FDSOI) high-k metal gate technology a new device type is evaluated for 5V applications. To support high voltages, nBOXFET is using 20nm-buried oxide (BOX) as gate dielectric. Such a device fulfills the stringent requirements for 5V automotive and IOT applica...

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Bibliographic Details
Main Authors: Lipp, D., Zhao, Z., Krause, G., Arfaoui, W., Ebrard, E., Bossu, G., Evseev, S., Herklotz, M., Siddabathula, M.
Format: Conference Proceeding
Language:English
Subjects:
Automotive
BOXFET
BTl
buried oxide
Degradation
FDSOI
HCI
Human computer interaction
Logic gates
Performance evaluation
PID
Reliability
Silicon-on-insulator
TDDB
Voltage
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Summary:In a Fully-Depleted Silicon-On-Insulator (FDSOI) high-k metal gate technology a new device type is evaluated for 5V applications. To support high voltages, nBOXFET is using 20nm-buried oxide (BOX) as gate dielectric. Such a device fulfills the stringent requirements for 5V automotive and IOT applications. Hence, with the high operating voltage, it can be considered for voltage level shifter or DC-DC-converter design and compatible with still popular 5V standard supply. In this paper the improved TDDB and PBTI performance due to TCAD simulation motivated modifications of nBOXFET device is discussed. The excellent device reliability degradation performance from HCI point of view is presented as well as Plasma Induced Damage.
ISSN:1938-1891
DOI:10.1109/IRPS48203.2023.10117689