Room-Temperature Direct Cu Semi-Additive Plating (SAP) Bonding for Chip-on-Wafer 3D Heterogenous Integration with μLED

This letter describes a direct Cu bonding technology to there-dimensionally integrate heterogeneous dielets based on a chip-on-wafer configuration. 100-μm-cubed blue μLEDs temporarily adhered on a photosensitive resin are interconnected by semi-additive plating (SAP) without thermal compression bond...

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Bibliographic Details
Published in:IEEE electron device letters 2023-03, Vol.44 (3), p.1-1
Main Authors: Susumago, Yuki, Liu, Chang, Hoshi, Tadaaki, Shen, Jiayi, Shinoda, Atsushi, Kino, Hisashi, Tanaka, Tetsu, Fukushima, Takafumi
Format: Article
Language:English
Subjects:
3D-IC
Bonding
chiplets
Coplanarity
Design optimization
direct bonding
flexible hybrid electronics (FHE)
heterogeneous integration
Insulation
Integrated circuits
Light emitting diodes
Microscopy
Multichip modules
Photosensitivity
Plating
Resins
Room temperature
Sapphire
Silicon dioxide
Through-silicon vias
μLED
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Summary:This letter describes a direct Cu bonding technology to there-dimensionally integrate heterogeneous dielets based on a chip-on-wafer configuration. 100-μm-cubed blue μLEDs temporarily adhered on a photosensitive resin are interconnected by semi-additive plating (SAP) without thermal compression bonding. By using SAP bonding, a lot of dielets can be stacked on thin 3D-IC chiplets. The following three key technologies are applied to solve the yield issues of SAP bonding. After pick-and-place assembly, additional coplanarity enhancement eliminates Cu bridges grown to a small gap between the μLEDs and photosensitive resin. The μLEDs arrays with sidewalls insulated by room-temperature ozone-ethylene-radical (OER)-SiO 2 -CVD are successfully bonded on sapphire wafers and a thin 3D-IC with through-Si via (TSV). Further design optimization is required, but partial seed pre-etching works well to increase the yield. Fully integrated module implementation with the 3D-ICs will be the next stage, however, we discuss a superior prospect for yield enhancement toward nearly 100%.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2023.3237834