On the influence of Ni(Pt)Si thin film formation on agglomeration threshold temperature and its impact on 3D imaging technology integration
Ni(10 at.% Pt) monosilicide is used as contact in microelectronics but suffers from degradation at relatively low temperatures due to agglomeration. Recent results obtained on 28 nm-FDSOI (Fully Depleted Silicon On Isolator) microelectronics devices have demonstrated severe yield loss after an annea...
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| Published in: | Microelectronic engineering 2023-03, Vol.271-272, p.111937, Article 111937 |
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| Main Authors: | , , , , , |
| Format: | Article |
| Language: | eng |
| Subjects: | |
| Online Access: | Get full text |
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| Summary: | Ni(10 at.% Pt) monosilicide is used as contact in microelectronics but suffers from degradation at relatively low temperatures due to agglomeration. Recent results obtained on 28 nm-FDSOI (Fully Depleted Silicon On Isolator) microelectronics devices have demonstrated severe yield loss after an anneal at 550 °C/2 h linked to Ni(Pt)Si film dewetting. Such agglomeration thermal budget is 100 °C lower than the ones measured on blanket wafers with in-situ or ex-situ four-point probe measurements. In this context, the aim of this paper is to investigate the effect Ni(Pt)Si formation process on the Ni(Pt)Si agglomeration using different approaches as (i) the classical one in which one anneal is applied to form silicide and leads also to agglomeration, (ii) the silicide formation through the standard SALICIDE process, “Self-Aligned Silicide”, and a subsequent anneal to induce agglomeration, and (iii) the standard SALICIDE process for silicide formation followed by an encapsulation of the top silicide surface by a SiN layer as applied in devices, and submitted finally to the agglomeration anneal. Our work demonstrated that the film thermal stability is influenced by the sequencing of the Selective Etch (SE) in the formation process and whether it is formed by a single or a double anneal. For single anneal, the thermal budget needed to agglomerate Ni(Pt)Si film is higher i.e., agglomeration occurs at around 700 °C/30 s in single anneal as compared to double anneal at around 550 °C/30 s. Another conclusion of this work is that four-point probe measurements are not sensitive enough to well estimate the real starting point of agglomeration phenomenon which is detrimental for devices (holes formation at the triple junctions). Some additional characterizations such as tilted Scanning Electron Microscopy (tilted SEM) are deeply needed for an accurate determination of agglomeration thermal budget. This study allows clarifying the main parameters leading to agglomeration: the film thickness and the grain size appear to be the more important ones.
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•Single-anneal approach formed thicker silicide layer delaying agglomeration.•Selective etch sequencing changes the thermal budget of agglomeration.•Stability of Ni(Pt)Si layer is unaffected by compressive SiN encapsulation.•Four-point probe technique is not sensitive enough to estimate holes formation.•Several suggestions are formulated to understand the agglomeration of Ni(Pt)Si layers. |
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| ISSN: | 0167-9317 1873-5568 |