Growth and characterisation of self-assembled cubic GaN quantum dots

Self-assembled cubic GaN quantum dots have been grown by plasma-assisted molecular-beam epitaxy on cubic AlN. Atomic force microscopy and transmission electron microscopy reveal islands of a mean height of 1.6 nm and a mean diameter of 13 nm. The influence of stacking faults on island nucleation is...

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Bibliographic Details
Published in:Materials Science and Engineering: B 2001-05, Vol.82 (1), p.212-214
Main Authors: Adelmann, C, Martinez Guerrero, E, Chabuel, F, Simon, J, Bataillou, B, Mula, G, Dang, Le Si, Pelekanos, N.T, Daudin, B, Feuillet, G, Mariette, H
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Cubic GaN
Exact sciences and technology
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
Quantum dots
Self-assembled quantum dots
Stranski–Krastanow growth
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:Self-assembled cubic GaN quantum dots have been grown by plasma-assisted molecular-beam epitaxy on cubic AlN. Atomic force microscopy and transmission electron microscopy reveal islands of a mean height of 1.6 nm and a mean diameter of 13 nm. The influence of stacking faults on island nucleation is discussed. The quantum dots show ultraviolet photo- and cathodo-luminescence with no thermal quenching up to room temperature.
ISSN:0921-5107
1873-4944
DOI:10.1016/S0921-5107(00)00763-7