Substitutional Carbon Incorporation in SiGeC/Si Heterostructures: Influence of Silicon Precursors

In this paper, SiGe or SiGeC epitaxy with Silane or Disilane, Germane and Methylsilane precursors was studied in a 300 mm industrial Reduced Pressure-Chemical Vapor Deposition (RP-CVD) reactor. The SiGe growth rate exponentially increased with the temperature in the 500 °C - 600 °C range for both si...

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Bibliographic Details
Published in:ECS transactions 2022-09, Vol.109 (4), p.237-248
Main Authors: Vives, Jérémy, Deprat, Fabien, Dutartre, Didier, Lespiaux, Justine, Duru, Romain, Bicer, Mehmet, Drogue, Nathalie, Juhel, Marc, Chaussende, Didier
Format: Article
Language:English
Subjects:
Chemical Sciences
Condensed Matter
Material chemistry
Materials Science
Physics
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Summary:In this paper, SiGe or SiGeC epitaxy with Silane or Disilane, Germane and Methylsilane precursors was studied in a 300 mm industrial Reduced Pressure-Chemical Vapor Deposition (RP-CVD) reactor. The SiGe growth rate exponentially increased with the temperature in the 500 °C - 600 °C range for both silicon precursors (activation energy E a = 2.1 eV). It was, at 550 °C, almost twice higher with Si 2 H 6 than with SiH 4 . At low temperature, Si 2 H 6 is indeed more reactive than SiH 4 , resulting in SiGe growth rates significantly higher for a given germanium composition. Then, carbon incorporation at 550 °C into Si 0.8 Ge 0.2 was studied. The higher reactivity of Si 2 H 6 compared to SiH 4 resulted in a better substitutional carbon incorporation. In our experimental conditions, 1.2 at% of fully substitutional carbon atoms could indeed be obtained with Si 2 H 6 (without any detectable interstitial ones). Meanwhile, only 0.5 at% of fully substitutional carbon atoms was obtained with SiH 4 .
ISSN:1938-5862
1938-6737
DOI:10.1149/10904.0237ecst