The dependence of indium incorporation on specified temperatures in growing InGaN/GaN heterostructure using MOCVD technique

[Display omitted] •Investigation of growth temperature on InGaN/GaN heterostructure grown using MOCVD.•Structural and surface morphology analysis of InGaN/GaN heterostructure.•Thickness estimation using Swanepoel method from transmittance measurement. In this study, InGaN/GaN heterostructures were g...

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Bibliographic Details
Published in:Materials research bulletin 2021-05, Vol.137, p.111176, Article 111176
Main Authors: Yusof, A.S., Hassan, Z., Ng, S.S, Ahmad, M.A., Md Sahar, M.A.A.Z., Hamady, S.O.S., Chevallier, C.
Format: Article
Language:English
Subjects:
Condensed Matter
III-nitride semiconductor
InGaN
Materials Science
MOVCD
Physics
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Summary:[Display omitted] •Investigation of growth temperature on InGaN/GaN heterostructure grown using MOCVD.•Structural and surface morphology analysis of InGaN/GaN heterostructure.•Thickness estimation using Swanepoel method from transmittance measurement. In this study, InGaN/GaN heterostructures were grown using metal organic vapor deposition (MOCVD) at different temperatures (800°C, 750°C and 700°C). The structural, crystallinity, surface morphology and optical properties were investigated using X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM) and ultraviolet-visible (UV-Vis) spectrophotometer, respectively. From observation, it is found that the indium composition was obtained from XRD through the process of fitting of the simulation. The process of indium incorporation is found to be sensitive to temperature variances. When the temperature is further reduced, the indium incorporation process would become stagnant as the decomposition process of ammonia would be less efficient. FE-SEM images have revealed surface-related defects such as V-pits. The secondary energy gap is obtained from the optical characterization which confirmed the incorporation of indium in the epilayers.
ISSN:0025-5408
1873-4227
DOI:10.1016/j.materresbull.2020.111176