Electrochemical and structural properties of V2O5 thin films prepared by DC sputtering

Vanadium pentoxide thin films have been prepared by reactive DC magnetron sputtering from a vanadium metal target without annealing posttreatment. XRD, Raman and electrochemical experiments on 800 nm thin films show a high crystallinity of the deposits. Chronopotentiometric measurements performed in...

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Published in:Journal of power sources 2005-08, Vol.146 (1-2), p.327-330
Main Authors: NAVONE, C, PEREIRA-RAMOS, J. P, BADDOUR-HADJEAN, R, SALOT, R
Format: Article
Language:English
Subjects:
Applied sciences
Chemical Sciences
Direct energy conversion and energy accumulation
Electrical engineering. Electrical power engineering
Electrical power engineering
Electrochemical conversion: primary and secondary batteries, fuel cells
Exact sciences and technology
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cited_by cdi_FETCH-LOGICAL-c350t-f11f58d23b829dc978c16f2f5d6151ab6ebb4d1f3592e371d556d5fa867bbddc3
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container_title Journal of power sources
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creator NAVONE, C
PEREIRA-RAMOS, J. P
BADDOUR-HADJEAN, R
SALOT, R
description Vanadium pentoxide thin films have been prepared by reactive DC magnetron sputtering from a vanadium metal target without annealing posttreatment. XRD, Raman and electrochemical experiments on 800 nm thin films show a high crystallinity of the deposits. Chronopotentiometric measurements performed in the two voltage range 3.8-2.8 and 3.8-2.15 V have demonstrated the promoting effect of the h 0 0 preferred orientation of V205 films in terms of polarization, kinetics and rate capability. The same reproducible deposition method is successfully applied to get films thicker than 1 mm in order to optimize the specific capacity. Effective high specific capacities can be then obtained with films 2.4 p.m thick tested at high constant current density (100 p.A cm-2 ): a stable capacity of 75 mAh cm-2 is available over 100 cycles in the 3.8-2.8 V potential range and 130 mAh cm -2 are still recovered in the range 3.8-2.15 V. These results indicate a promising cycling behaviour can be expected with thick films exhibiting a preferred orientation corresponding to V205 planes perpendicular to the substrate.
doi_str_mv 10.1016/j.jpowsour.2005.03.024
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Effective high specific capacities can be then obtained with films 2.4 p.m thick tested at high constant current density (100 p.A cm-2 ): a stable capacity of 75 mAh cm-2 is available over 100 cycles in the 3.8-2.8 V potential range and 130 mAh cm -2 are still recovered in the range 3.8-2.15 V. These results indicate a promising cycling behaviour can be expected with thick films exhibiting a preferred orientation corresponding to V205 planes perpendicular to the substrate.</description><identifier>ISSN: 0378-7753</identifier><identifier>EISSN: 1873-2755</identifier><identifier>DOI: 10.1016/j.jpowsour.2005.03.024</identifier><identifier>CODEN: JPSODZ</identifier><language>eng</language><publisher>Lausanne: Elsevier Sequoia</publisher><subject>Applied sciences ; Chemical Sciences ; Direct energy conversion and energy accumulation ; Electrical engineering. 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Effective high specific capacities can be then obtained with films 2.4 p.m thick tested at high constant current density (100 p.A cm-2 ): a stable capacity of 75 mAh cm-2 is available over 100 cycles in the 3.8-2.8 V potential range and 130 mAh cm -2 are still recovered in the range 3.8-2.15 V. These results indicate a promising cycling behaviour can be expected with thick films exhibiting a preferred orientation corresponding to V205 planes perpendicular to the substrate.</description><subject>Applied sciences</subject><subject>Chemical Sciences</subject><subject>Direct energy conversion and energy accumulation</subject><subject>Electrical engineering. 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subjects Applied sciences
Chemical Sciences
Direct energy conversion and energy accumulation
Electrical engineering. Electrical power engineering
Electrical power engineering
Electrochemical conversion: primary and secondary batteries, fuel cells
Exact sciences and technology
title Electrochemical and structural properties of V2O5 thin films prepared by DC sputtering
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