Electrochemical and structural properties of V2O5 thin films prepared by DC sputtering

Vanadium pentoxide thin films have been prepared by reactive DC magnetron sputtering from a vanadium metal target without annealing posttreatment. XRD, Raman and electrochemical experiments on 800 nm thin films show a high crystallinity of the deposits. Chronopotentiometric measurements performed in...

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Bibliographic Details
Published in:Journal of power sources 2005-08, Vol.146 (1-2), p.327-330
Main Authors: NAVONE, C, PEREIRA-RAMOS, J. P, BADDOUR-HADJEAN, R, SALOT, R
Format: Article
Language:English
Subjects:
Applied sciences
Chemical Sciences
Direct energy conversion and energy accumulation
Electrical engineering. Electrical power engineering
Electrical power engineering
Electrochemical conversion: primary and secondary batteries, fuel cells
Exact sciences and technology
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Summary:Vanadium pentoxide thin films have been prepared by reactive DC magnetron sputtering from a vanadium metal target without annealing posttreatment. XRD, Raman and electrochemical experiments on 800 nm thin films show a high crystallinity of the deposits. Chronopotentiometric measurements performed in the two voltage range 3.8-2.8 and 3.8-2.15 V have demonstrated the promoting effect of the h 0 0 preferred orientation of V205 films in terms of polarization, kinetics and rate capability. The same reproducible deposition method is successfully applied to get films thicker than 1 mm in order to optimize the specific capacity. Effective high specific capacities can be then obtained with films 2.4 p.m thick tested at high constant current density (100 p.A cm-2 ): a stable capacity of 75 mAh cm-2 is available over 100 cycles in the 3.8-2.8 V potential range and 130 mAh cm -2 are still recovered in the range 3.8-2.15 V. These results indicate a promising cycling behaviour can be expected with thick films exhibiting a preferred orientation corresponding to V205 planes perpendicular to the substrate.
ISSN:0378-7753
1873-2755
DOI:10.1016/j.jpowsour.2005.03.024